Abstract
An enhancement-mode polymer space-charge-limited transistor is realized with low subthreshold swing of 96 mV/decade, low operation voltage of 1.5 V, and high on/off current ratio of 104. By investigating the influence of device geometric parameters on transistor characteristics, low subthreshold swing is obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations on the potential distribution at the central vertical channel verify that the base electrode has the best control on the magnitude of potential barrier which results in low subthreshold swing. In addition, the influence of the solvent on the enhancement-mode polymer space-charge-limited transistor is also investigated.