Abstract
In this research, trap quantitative and qualitative properties in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with different annealing sequences have been studied on the basis of low-frequency (1/f) noise and random telegraph noise (RTN) analyses. To realize the relation between electron-trapping behavior and annealing processes, the rapid thermal annealing (RTA) procedure at 400 ℃ in oxygen ambient was utilized in the procedure before the tantalum nitride (TaN) layer or after the TaN layer. For comparison, the control samples were fabricated without the RTA procedure.