Abstract
Vertical-cavity surface-emitting lasers have been fast developed as semiconductor optical source in recent years, and they are widely applied such as fiber communications. In this paper, we introduce the method of ion-implantation to fabricate the VCSELs with the wavelength of 850nm using GaAs/AlGaAs quantum-wells as the active layer and AlGaAs/AlAs as the DBR pairs. Specially, the apertures of VCSELs are sputtered indium-tin-oxide (ITO) films. From the measurements, we have some following results : the threshold current can be lower 6mA ; the lowestthreshold current is operating under 60℃. Between some temperature range, the threshold current can keep unchanged. After sputtering thin ITO film on the emission aperture, the light image has modification. We may adopt the way of oxidation to fabricate these devices instead of proton-implantation. Beside of the ITO film, it is a method using thin-metal to been probe contact. We believe that by taking advantage of these above manners, the threshold current can be much lower and the other characteristics also can be improved.