Abstract
This thesis research topics for the Nonvolatile memory (NVM) that is based on a structure of Gate-All-Around (GAA) polycrystalline silicon (poly-Si) nanowires (NWs) structure with Silicon-Nanocrystals (NCs) as the storage nodes is demonstrated. The GAA poly-Si-SiO2-Si3N4-SiO2-poly-Si (SONOS) NVMs are also fabricated and compared. Using 3-D multi-gate structure can increase the coupling-ratio, so fast program and erase speed can be obtained. Silicon-Nanocrystals charge trapping layer improved reliability in this work. Used the Gate-All-Around structure of the nanowires to enhance the tunneling oxide electric field, to increase the program and erase operation efficiently. On the one hand, to suppress the gate injection to avoid that slow erase speed. in the stacked structure of the non-volatile memory primarily. The GAA NCs NVMs have a 4.2 V of threshold voltage shift at 18 V for 1 ms, and are faster than the GAA SONOS NVMs do. In reliability studies, this NVM shows superior endurance after 104 program/erase (P/E) cycles, and loses only 14% of its charges lose after 10 years at 85 oC. 3D stacked structure can push flash memory device scaling down, and improve the high-density of integrated circuit effectively. Silicon nitride is often used in floating gate structure in non-volatile memory. Because the stored charge is concentrate in trapping layer with Silicon-Nanocrystals, it would improve device endurance. The difference conduction band between Silicon-Nanocrystals and silicon oxide would be enlarger, so it has increased the data retention of this element information. Silicon-Nanocrystals can display 2-bit operation due to its discrete trap, enhance gate control ability for increasing program and erase operation. The experimental data proved in thesis of this feature. This work shows experimental data for device’s reliability, all the data can display Gate-All-Around Poly-Silicon Nanowires Flash Memory with Silicon-Nanocrystals has applied to high value actually, it would become the next-generation flash memory.