Abstract
Tunnel field-effect transistor (TFET) is considered as an attractive candidate for future low-power applications because of its steep subthreshold slope. However, conventional TFET transistor suffers from a low on-state current. This thesis proposes a new metal source TFET to increase the on-state current by combining the band-to-band tunneling and Schottky barrier tunneling. Two-dimensional simulations with nonlocal models were performed to examine the physical mechanism and associated design. The results show that an additional tunneling dielectric between the source and the channel can be utilized along with the metal source to ensure a high on-state current while retaining an abrupt on-off switching of TFET devices.