Abstract
This research mainly discusses how parameters influence the total thickness variation(TTV). We calculate the relative speed which distributes in the grinding zone and the passing ratio in the view point of kinematics. In this experiment, we use the angle of inclination, the infeed rate, the rotational speed of the cup-typed wheel, and the rotational speed of the wafer for the main parameters. With the re-equipped Brown & Sharpe external grinder, we proceed the experiment on the silicon wafer surface grinding by the resin-bonded diamond wheel. After the simulate results, we know that the passing ratio of the center to the periphery of the wafer will steady when we fix the size and the position of the wheel and the wafer. We conclude from the results of the experiment that the value of the TTV equals to the height between the wheel and the center of the wafer(the copy of the profile) minus the variation of the material deformation of the center and the periphery of the wafer(caused by the various grinding force), and the material expansion effects in the center of the wafer(caused by the grinding heat). The mechanism in the center of the wafer is mostly sliding, that in the periphery is mostly cutting. To add: the unit above is micron. By using SEM to observe the cross-section of the ground wafer, the depth of the damage layer of the ground wafer is found to be 7 micron.