Abstract
External modulation of single frequency lasers is an attractive approach for the next generation of communication systems。In this paper，we use selective area epitaxy(SAE) method to fabricate InGaAsP/InP electroabsorption modulator integrated with a distributed feedback(DFB) laser。From the measurement results of DFB laser，we get that the pulsed threshold current is 23.5mA at room temperature and the side mode suppression ratio up to 43 dB，and the characteristic temperature of threshold current and slope efficiency is 65K and 236K。Finally，1.55μm DFB laser and 1.45μm electroabsorption modulator are demonstrated by Photoluminescence system。