Abstract
This study demonstrates the vertically integrated environment sensor with a capacitive relative humidity sensor (RH sensor) and a resistive temperature detector (RTD) using the TSMC 0.18μm 1P6M CMOS process and simple in-house post-CMOS processes. Features of this study are: (1) multiple sensing unit could be integrated and achieved in one chip; (2) fast response humidity sensor are realized based on capacitive sensing principle; (3) simple post-CMOS processes using metal wet etching, reactive ion etching, pneumatic dispensing of polyimide (PI), curing process, and wire bonding. The main measurement results indicate the RH sensor with sensitivity of 0.051%/%RH and response time of 16s; thus, the sensitivity of RTD is 0.28%/℃.