Abstract
ABSTRACTStudy of Probing Interfacial Strains in SiGe/Si Using Three-Beam Bragg-Surface DiffractionTing-Wei Wu, Advisor : Professor Shih-Lin ChangMaster of Physics,National Tsing Hua University, Hsin-Chu, TaiwanIn the manufacturing process of semiconductor, interface strains play an important role in changing the device characteristics. In order to understand more clearly the characteristics of the device, we study of probing interfacial strains in SiGe/Si sample using Three-Beam Bragg-Surface Diffraction(BSD). The experiment was performed on BL17B1 beam line in the National Synchrotron Radiation Research Center(NSRRC). The energy of incident X-rays used is 12KeV. First of all, we study crystalline quality of SiGe / Si samples using grazing incidence X-ray diffraction and Bragg’s diffraction. Afterwards, we study interfacial strains of SiGe / Si samples at different thickness of film using Three-Beam Bragg-Surface Diffraction(BSD). The sample is a germanium silicide film grown on a silicon substrate, where the SiGe film is about 59.90、47.58、28.72、23.23nm thick, which was manufactured by National Nano Device Laboratory(NDL). The experimental analysis found that when the thickness of the germanium silicide film becomes thicker and before reaching the critical thickness of film, the interfacial strains along the c-axis gets strong.