Abstract
Because of the improvement of processing techniques, the applications of thin film have become more and more wider spread. The properties of the material strongly depend on its structure. As we know, many processing parameters such as incident energy, temperature of substrate, and misfit between film and substrate atoms play an important role in the thin-film deposition. Understanding the relationship between those processing parameters and the structure of thin film is very important. In this article, we investigate (1) lateral distance of film atoms、(2) prefer orientation、(3) roughness、(4) coverage by means of molecular dynamics simulations with Embedded atom method potential. The result shows that the misfit is the most important factor to obtain a pseudomorphic film. The degree of prefer orientation decreases as the temperature is increased. Moreover, the roughness and the coverage of thin film are found to be improved by increasing the incident energy or the substrate temperature. We found that this improvement will saturate at some value if we continue increasing the incident energy or the temperature. Further study of Cu/Ni(100) system shows that the roughness and the coverage are both improved at 600K substrate temperature or with incident energy of 1eV. Nevertheless, if we increase further the temperature or the incident energy there will be no significant improvement for the system. Extra high temperature or incident energy, on the other hand, degrades the degree of prefer orientation of substrate. Therefore, to obtain a pseudomorphic thin-film of Cu/Ni(100), the substrate temperature should be controlled at around 300K and the incident energy should be fixed around 0.4eV.