Abstract
In this paper, we studied the enhancement of photon-induced free-carrier density in silicon-on-insulator (SOI) by applying electric field. Under such a bias, electronic band bends near the surface, resulting in the interface condition either in accumulation or inversion that depends on the polarity of bias voltage. Both conditions will effectively suppress the surface recombination. In addition, the photon-induced carrier density is also dependent on the thickness of SOI substrate. The enhancement due to two-side bias (bottom and top) is better than single-side bias, simply equivalent to two effects added together.