Abstract
PECVD is used to deposit silicon-rich silicon dioxide thin film. After annealing process, it turns out to be silicon dioxide thin film containing nano-silicon channel. The experiment shows that silicon content increases when silane ratio was raised during deposited process. The average grain size of crystalline silicon is 5 nm. Nucleation phenomenon is observed inside the ultrathin silicon-rich silicon dioxide film and the interface. Furthermore, silicon nano channels through thin silicon-rich silicon dioxide are formed with sufficient anneal.