Abstract
In this thesis, we took the highly resistance of the p-type substrate for the modified grating solar cells with porous silicon structure were fabricated by electrochemical etching (ECE). The morphology of the macropores was examined by the SEM analysis. Then the nitric acid oxidation of Si (NAOS) treatment was discussed and post oxidation annealing (POA) was investigated. The passivation techniques with TEOS and Al2O3 were also studied. The electrical properties of the modified grating solar cells were characterized through the photo current-voltage (I-V) measurements. And we find a way to improve the metal contact by using the SiNx mask process. The HNO3 treatment incorporated POA show positive effects on the Jsc improvement. The highest Jsc can achieve 42.12 mA/cm2. The devices with ALD- Al2O3 film show the highest Voc can achieve 0.577V. By introduced the SiNx hard mask process (SMP), the maximal F. F. can reach 0.72, and the highest efficiency can achieve 15.94%.