Abstract
Density of the two dimensional electronic gas formed on the interface AlGaN/GaN of HEMT calculated through solving the Poisson and Schrodinger equations self-consistently. Different from other Ⅲ-Ⅴ compounds, due to the difference of lattice constants there is a considerable piezoelectric effect exists in this interface. We can vary the 2DEG density by moderating the size and the doping of the device. The many-body effect is considered by incorporating the exchange-correlation energy to the effective single electron model used for the calculations. Furthermore we will use a simple model to discuss the saturation voltage and the saturation current in this device.