Abstract
The silicon oxide film has very important applications in the field of solar cells as well as the IC industry. The oxide layer deposition method which is the most widely used in industry is the thermal oxidation method. However, this process needs to use the costly furnace and tube equipment. As the decreasing scale of semiconductor device, we need the thinner oxide film for the process. The limit thickness of the oxide layer with the furnace processing is 5nm. In this research we develop the ultrasonic spray technique and use hydrogen peroxide solution as the precursor for the growth of silicon oxide film. This technique can be applied in a non-vacuum environment, and the oxide thickness can be controlled in the range of 1.31-2.7nm. The spraying oxide film can enhance the carrier lifetime about 35%, and the in-line process is the most competitive specialty. In addition, we can use our spraying oxide film to produce a MIS junction. We can find out the potential of spraying oxide film application in solar cell manufacture industry.