Abstract
This paper concerns the electro-thermal properties of power bipolar junction transistors. In order to keep with the trend of circuit integration, the problems of thermal effect is very important for power devices and low voltage circuit integrated on the same chip. First, in order to reduce the self-heating effect, we discuss the influence of current distribution and temperature change for different structures. Next, we study the effect of thickness and doping concentration of the epitaxial layer on breakdown voltage and Kirk effect. The Kirk effect causes a strong degradation of current gain and frequency response, so it is important to prevent this effect in power devices. At last, we simulate the device I-V characteristics with CAD tool like Medici and a model parameter extraction program (BSIMPro) to extract the Gummel-Poon model of power bipolar junction transistors at different temperatures.