Abstract
The simple and low-cost chemical shrink method was applied for electron beam resists. The shrink ratio increased with diffusion bake temperature and didn’t obviously depend on diffusion bake time. The uniformity of CD on each die could be improved by this method. As the hole become smaller, the shrink reaction could not achieve at the bottom.In the second part of this thsis, the radioactive tracer technique was applied to investigate metal migration and adsorption behavior for electron-beam resist. The important process parameter, viz., baking temperature, baking time, the type of substrate （i.e., bare silicon（111）, bare silicon（110）, bare silicon（100）, polysilicon, oxide, nitride）were evaluated. Our results indicated that solvent evaporation was found to have a significant effect on impurity.In addition, we offer diffusion model to describe result. The different face of bare silicon was explained by structure model.