Abstract
Chemical Mechanical Polishing (CMP) is the most effective way to achieve global planarization in semiconductor process. In addition, the polishing pad is one of the primary consumables in CMP. And the pad life will deeply influence the process stability and the cost of ownership. For this reason, we want to extend pad life in a premise of maintain process stability.According to academic research, there are some relationship between pad life and removed degree of pad material. However, most of the pad material removed caused by pad conditioning. Therefore, we want to understand the properties variation of pad during pad conditioning process. And we will analyze the surface roughness and dressing rate of pad between several kinds of conditioning factors, such as conditioning pressure, conditioning velocity, conditioning time, soaking time of pad, degree of pad usage, and the pH of slurry, etc.The purpose of my study is trying to reduce the removed degree of conditioning pad and arise the surface roughness of pad in a premise of achieve ideal conditioning effect.Consequently, according to the experiment and theoretical results, the lower conditioning pressure and conditioning velocity will reduce the pad removal degree. And the pad hardness and the pH of slurry, etc, will influence the dressing rate at the same time.