Abstract
The objective of this study was to establish an approach to simulate and predict the behavior of dishing. The dishing phenomenon was an key issue for the chemical mechanical planarization of wafer, especially when copper was used as the conducting material. It was believed that the dishing phenomenon was due to the selectivity of chemical erosion effect and the distribution of pressure will determine the final profile of the dishing. The established model required preliminary experiments to determine the material removal rate. Verification experiments will also be conducted to evaluate the proposed approach