Abstract
In recent years, the improvement of power electronics and power devices is one of keys when the energy issues become more important. The cost down and the tradeoff between breakdown voltage and on-resistance have always been major concerns in designing power devices. Many studies have proposed their structure only needs few masks. However, it is still special process which needs wire bonding to connect the power device and main circuit. It is a limit for cost down. In this thesis, a novel 20V-class device with CMOS logic compatible process is proposed which called Contact Gate MOSFET (CGMOS). Since the device does not need the mask of drift region and wire bonding, it could be cost down substantially. By T-CAD simulation and measurement, the newly designed device has breakdown voltage up to 18 volt and 8.8mΩ∙mm2 specific on-resistance. From statistical distribution, the stability of device is up to 87%. And no characteristic variation can be observed after long term temperature stress at 125˚C for 1000 hours.