Abstract
Nano-crystalline ZrN thin films were successfully deposited on p-type Si(100) substrates and pre-existed zirconium interlayer using the hollow cathode discharge ion plating (HCD-IP) system. The effects of interlayer thickness on the composition, structures and mechanical properties of the ZrN coatings were investigated. The results showed that it is extremely difficult to deposit a pure zirconium layer without the contamination of N, moreover, the formation of ZrO2 seems to be inevitable during heating and deposition process of ZrN film using the HCD-IP system. The reaction depth of oxidation in Zr interlayer was up to 158 nm because the formation of ZrO2 may hinder the diffusion of oxygen into Zr underlayer and thereby terminating the advancing of ZrO2/Zr interface. The preferred orientation (111) was dominant in ZrN films for all specimens. The resistivity decreased with increasing the thickness of ZrN layer of the film. With an interlayer introduced, the residual stress was released, but the hardness did not change significantly. Therefore the release of residual stress had no relationship with the hardness.