Abstract
In order to enhance light extraction eciency, we pro- posed two new structures in this paper, micro mirror array and auto-cloned photonic crystal array embedded in GaN. Light extraction eciency and far eld of GaN-LED with embedded micro-structure were studied using rigorous coupled-wave analysis(RCWA) simulation. Besides, we also investigated the dependence between light extraction efficiency and structural parameters of micro-structure embedded in GaN-LED. Patterned sapphire substrate(PSS)-LED, patterned SiO欲(P-SiO欲)-LED,micro-mirror array(MMA)-LED, auto-cloned photonic crystal array(APhC)-LED were compared in this paper. According to model calculation and analysis, the APhC-LED had the best light extraction eciency, 83.4%, and the enhancement effciency compared with conventional LED was 584%.