Abstract
The anodic etching of silicon in HF solution is a useful technique for MEMS(Micro-electrical Mechanical Systems) . We can use some structures or characters of porous silicon for MEMS technology. This paper studies how different porous silicon generalized by different masks, and uses the Double-side technique to improve undesired lateral etching during processing. Consequently, it has been demonstrated that porous silicon layers can be formed completely through the thickness of a 500 um wafer, and even thicker one.