Abstract
AbstractAmong various low-k materials, spin-on-glass (SOG) materials have been widely used as an interlayer dielectric in multilevel interconnections because of their ease of application and relatively low process costs. Porous materials are promising low-k materials with dielectric constant below 2; however, candidates should have good mechanical, thermal properties and minimum moisture adsorption. Compatibility of the films with IC processing was also investigated in this work.Spin-coating conditions have been optimized by various spin rates, precursor compositions and pre-coating treatments. The trimethylchorosilane (TMCS) in the precursor solution not only enhanced the hydrophobicity of the nanoporous silica film, but also the gap-filling ability on the aluminum trenches. In addition, 400℃ was found a good curing temperature for obtaining a low dielectric constant (1.93), good strength (65 Mpa) and hardness (1.4 Gpa).This work presents the results of nanoporous silica compatibility with the materials used in cleaning process and copper metallization.