Abstract
As progress of IC fabrication technology, the device size was scaling down gradually. According to the prediction of ITRS (International Technology Roadmap For Semiconductors Conference ) of 2003, 1/2 Pitch of the component has reached 90 nm in 2004, and will reach 65 nm in 2007. Nanoimprint is the most promising ways among many lithography technologies. It costs less and reduces the process cycle time.□□his thesis is divided into three parts: First, we study the fabrication of mold of nanocontact printing, and success in defining the pattern on HSQ by the technology of the e-beam lithography of low dose and prebake. Then, we etch the mold by wet etching method. Second, we focus on the preparation of ink. At last, we find out the optimumcondition of process in the technology of nanocontact printing.□□SQ molds with different wires width region from 80nm~200nm, and different dots size region from 80nm~200nm were designed, The ratio line width and space is 1:10. The HSQ were mixed with MIBK with condition is HSQ:MIBK= 2 : 1. After spinning, the HSQ was baked at 90oC 3mins or at 120oC 3mins. The e-beam lithography with dose 40~400uC/cm2 were performed on the above treated HSQ. Finally, use TMAH to etch HSQ and HSQ molds with 40nm-190nm were fabricated, SEM picture showed the aspect ratio of the mold.□□n the part of nanocontact printing, we use two kinds of different inks, one of is poly-l-lysine mixed Rhodamime. Another is aminosilane mixed CdSe/ZnS QDs. By control thickness, pressure and time of both two inks. We succeed in transfering the pattern on substrate HSQ. The fluorescence microscope, SEM, and AFM were then taken to observe the pattern transfer.