Abstract
This thesis experimentally explores the process fabrication and measurement characterization of Schottky barrier nanowire charge trapping memories. Two different types of hard-mask lithography were examined to fabricate the gate-all-around nanowire structure. In cell characterization, this work studies the cell reading, programming, and erasing at room and higher temperatures. Reliability characterization in cycling endurance and data retention are also investigated. The results show that the high-temperature Schottky barrier nanowire charge trapping cells preserve good electrical characteristics.