Abstract
AbstractThis paper is divided into two part, one for metal nanoparticle arrays were fabricated by E-Beam lithography and immersion plating, and transferred onto parylene C/polyimide by hot-embossing nanoimprint. Another experiment, Gold nanowires were fabricated by UV nanoimprint lithography and immersion plating.The first part, nano-hole arrays was defined by E-beam lithography on α-Si(400A)/Si3N4(500A)/Si. The hole/spacing is expected to be the 80/120nm under different exposure doses of 6 ~ 7μC/cm2. And the metal nanoparticle arrays were formed by replacement method. The plating solution were CuSO4 or HAuCl4 with HF. The metal nanoparticle arrays were transferred onto parylene/polyimide substrate with the imprinting pressure 250~400N/cm2 and imprinting temperature 100~150℃. So the optimal imprint and demold can be found. The nano-array pattern, metal nanoparticle arrays, and imprinting results were observed by SEM.The second part, the nano trench was defined by UV-NIL technology on α-Si(400A)/Si3N4(500A)/Si. Under the UV exposure dose 250mJ/cm2, we can obtain nano-trench with 150nm width, 225nm depth. The immersion plating solution was mixture solution of HAuCl4 with HF. The nano-trench and gold nanowires were examined by SEM. Further more, in Auger mapping, we found the photoresist PAK-01-200 was etched by replacement solution. This problem can be solved by choosing right solution.