Abstract
This work presents a tip tunneling diode by 0.18µm embedded flash process. The tip structure is employed to create electrical field enhancement effect, resulting in current difference between forward and reverse bias. Thorough, measurement and simulation of the tunneling diodes are included in this work. Significant conduction current through tunneling can be obtained with high enough electric field. Unlike a conventional diode which requires carrier injection into the junction at forward-bias operation, tunneling diode can be advantageous for speed switching. Capacitance is relatively independent of bias voltage. In addition, its IV characteristics remains very stable with temperature change.