Abstract
In this study, a nonvolatile memory realized by fully-compatible LTPS process is investigated for various novel applications. For data storage, the embedded N-channel Metal-Nitride-Oxide-Silicon (MNOS) One-Time-Programmable (OTP) cell arranged in a NOR array architecture is demonstrated. Furthermore, fast program efficiency and high disturb immunity are obtained by divided voltages on wordline (WL) and bitline (BL). Through channel FN programming, superior data retention as well as low power operation are therefore achieved. The new embedded MNOS cell has provided a promising one-time-programming memory solution on the LTPS panels’ applications. For AMOLED (Active Matrix Organic Light-Emitting Displays), the proposed innovative current boosting scheme can adjust the threshold voltage level of a P-channel TFT in the OLED driver circuit. Thus, the uniformity of the driving current can be greatly improved without any change on the conventional 2-TFTs and 1-capacitor pixel circuit. The mura recovery of operation can be performed during product testing steps without any external memory modules or additional compensation circuits. This current boosting scheme has been successfully verified in a 2.4-inch AMOLED panel with significant uniformity enhancement.