Abstract
In this thesis, a recessed channel structure of dopant segregated Schottky barrier MOSFET (RC-DSSBMOS) is proposed and simulated for achieving suppressed short-channel effect and good on/off current ratio in scaled Schottky barrier MOSFETs. The simulated results shows that the recessed channel structure can alleviate the lateral field penetration effect coming from the source and drain electrodes. Thus, it is rather insensitive of short-channel device characteristics to the variations of drain voltages. The dopant segregation layer helps to have a larger on/off current ratio, and to counteract the parasitic problem caused by the recessed channel structure. Importantly, an asymmetric structure of RC-DSSBMOS is proposed and designed herein to have an enhanced driving on-current, minimized ambipolar conduction and a suitable short-channel effect as the devices are scaled down.