Abstract
In this study, we will develop monolithic micro-light-emitting diodes array (mLEDA) for pattern display, and perform a 64 x 64 row-column-addressed micro-light-emitting diodes array, which have advanced applications in micro-projector, mask-less photolithography, and optogenetics. We will develop 380 nm and 450 nm mLEDAs in this study. By using the flip-chip bonding technology, the light is come out from the back side of wafer, which is sapphire face, but the light will deflect between the interface of GaN (n~2.4) and sapphire (n~1.8) because of different refractive index, and the light will diverge passing through the sapphire. The large sapphire thickness leads to optical cross-talk, so the light will interfere the adjacent pixels. Thus, the higher density of pixels, the thinner sapphire thickness we need, or we can remove the sapphire by Laser Lift-Off. We also develop micro-lens array technology to focus the light and restrict the divergence of light in our design.