Abstract
The effacts of nuolear radiation on transistors aro prodictod by combining transistor theory and by observing the experimenval results of irradiated semiconducters.The most important offect of neutron irradiation on semioonducters is the doorease in the minority-carrier lifetime which dictates the usful lifetime of tranaisters. In the experiments, the effeovs of fast nentren irradiation on transistors of various types and materials are investigated up to an integrated flux of 4.5 ×1014n/cm2.From the observed data, they indioete that the inverse of the common emitter curront gain of the transistor decreases linoarly as a function of the integrated flux for sufficiently long period of irradiation. The experimental results agree reasonably well with the theorectioal predictions.