Abstract
The way to measure the current of memory cell nowadays is to use precision, high-cost automatic test equipments. The method proposed here uses an embedded measurement circuit to obtain cell current for flash memory such that not only the measurement cost can be reduced but also current is detected in any time slot. The maximum measure range of the proposed embedded measurement circuit for flash memory cell current is 25.6uA with resolution as accurate as 0.1uA, so that the measurement time for a flash memory cell can be completed under 260ns. The HSPICE simulations of proposed embedded measurement unit use a 0.25um TSMC CMOS process technology.