Abstract
In this study, we present a new high sensitivity absolute capacitive pressure sensor that it is estimated to exert on your phone or tablet and other personal assistant system. The design features of this capacitive pressure sensor are coating Parylene-C to accomplish two kinds of chambers and using double deformable sensing diaphragms to enhance sensor’s sensitivity. Besides the double deformable sensing diaphragms, the use of trenches can also improve the sensitivity of capacitive pressure sensor by reducing diaphragm’s flexural rigidity. The structure of pressure sensor was made through TSMC 0.18µm 1P6M CMOS-MEMS process. Not only we can effectively use the multilayer film stack features to complete the study, but also we put forward the possibility to develop other pressure sensors by using this CMOS-MEMS platform.