Abstract
The objective of this research is to employ high level language-MAST for establishing behavior models of IGBT for numerical simulation purposes. By making use of the datasheets provided by the manufacturers, the mathematical model is built computer aided engineering analysis of electronic circuits. In addition, the thermal heating effects are included in the simulation of temperature rise for better approximation of the practical operational conditions. And, the temperature rise is fed back to the IGBT for observations of the thermal runaway phenomenon. In this thesis, the IGBT model is represented by three modes, namely steady state, transient, and self-heating transient. The simulation results are compared with the experimental data published by the manufacturers and the simulated results from the analytical models. The simulated results have shown that the steady state voltage drop, conduction current, junction temperature, and voltage or current wave forms on gate and collector are all very agreeable to the experiments. Moreover, the major advantage is that a general behavior model of IGBT is established for all given parameters based upon the various element characteristics.