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應用垂直式導線與陽極接合於SOI-MEMS晶片之晶圓級封裝
Thesis

應用垂直式導線與陽極接合於SOI-MEMS晶片之晶圓級封裝

林炯文
Masters, 國立清華大學, 奈米工程與微系統研究所
2004

Abstract

微機電封裝 穿透晶片式導線 電鍍 MEMS packaging through-wafer interconnections electroplating
Packaging of a Micro-Electron-Mechanical System (MEMS) is a key technology for MEMS. With an imperative need of High-Aspect-Ratio microstructures, SOI-MEMS technology is rapidly used because of its process simplicity and robust structures. But packaging of a SOI-MEMS wafer was rarely investigated. The main reason is that the interconnection which is been used in SOI-MEMS wafer have a step height of at least dozens of micrometers. None of existing MEMS packaging technologies can seal this range of step height without failed. This thesis bring up a SOI-MEMS packaging solution with through-wafer interconnections and anodic bonding with Pyrex 7740 glass. Taking advantage of through-wafer interconnections, electrical signals can input from backside of wafer, which is compatible with existing Surface Mount Technology. With anodic bonding of single-crystalline silicon and Pyrex 7740 glass, we can achieve high bonding strength and hermetic seal. Whole packaging process accomplishes at wafer-level, which represent lower cost and best post-process compatibility.

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