Abstract
This thesis work demonstrated the high performance of a light emitting diode (LED) which is able to illuminate visible light at very high lumen (eg. 254 mcd); the LED is formed by five InGaN/GaN quantum wells and a high voltage enduring contacting structure which is composed of Nickel (Ni)/Aluminum doped Zinc Oxide (AZO). In order to enhance the high voltage enduring capability of the LED, one of the contacting structures is formed as a p-i-n structure. By depositing a thick layer of ZnO (i.e. 440 nm) as the i layer of this p-i-n structure, a large portion of voltage is sustained by this i layer, which makes the LED able to increase its voltage tolerance to as high as 65 VDC. Also attributed to the transparent property of the contacting structure, the light emitting capability of this LED demonstrated an unabated one due to the non-transparent electrode; this trait further assures such device as a viable technology solution for tomorrow’s household illuminating devices. With further development on this LED and its processing technology, this LED bears the potential to be directly connected to the household power source -- 110 VAC.