Abstract
Conventional dielectrics quality testing methods are Constant Current Stress (CCS) and Constant Voltage Stress (CVS). The common shortcoming of these two methods is their long measurement time, which makes them not applicable to Wafer-level Automatic Testing (WAT). Exponentially Ramp Current Stress (ERCS) and Linear Ramp Voltage Stress (LRVS) can not only save measurement time, but also accurately predict oxide quality. In this thesis, a scheme to verify ERCS is equivalent to CCS is proposed. And it has been found the ten-years operation voltage obtained from LRVS is almost the same as that obtained from CVS. This implies that CVS can be replaced by LRVS. Finally, the relationship between LRVS and ERCS is also studied. Because of electron trapping effect, LRVS cannot be converted to ERCS directly.