Abstract
In the recent years, the semiconductor component size getting smaller and smaller. The metal oxide semiconductor field effect manufacturing process, after the size of less than 22 nm, the semiconductor process technology will face a big challenge. So Atomic Layer Deposition(ALD) process was interested and more popular in the recent years. There are some benefits of ALD process, one of this technology can be deposited the films at the atomic size, the other can be deposited films more uniform because of gas can be reached to anywhere of the surface, and it can also deposit on non-planar. The purpose of this study is to investigate the argon/hydrogen plasma discharge for atomic layer deposition process. When using different size of the mesh size, the change of the H radical flux. There are two part of this study, simulation and experiment. In simulation studies, RF plasma was operated at 13.56 MHz. The electron density, electron temperature, and H number density were reached to steady state after 0.2 second. The plasma potential near two electrodes will accelerate electron and ions. There are three parts of the simulation, changing different mesh size (0.25mm, 0.5mm, 2mm) of the structure. And then using different power to start the simulation. The simulation results, when the power increase, the electron density, electron temperature, average potential increase. H radicals flux are also increase when power increase. Representative more precursor reacted with the active radicals, so that the uniformity of the films can be improve. But relative to other ion flux increase, it means the ion bombardment effect increases. There is another simulation which is changing input gas ratio of H2/Ar. The simulation result is that the ratio of H2/Ar increase the H radicals flux increase. In spectrum analysis, the intensity of characteristic spectral lines of Hα and Hβ decrease when pressure increase. And argon intensity of characteristic spectral lines also the same trend. In this simulation study, if we want to let the films more uniform, in addition to increasing H radicals flux but also need to consider the ion bombardment. So it should be find an optimum balance.