Abstract
With the explosive growth of consumer electronics, Non-Volatile storage requirement increases drastically in variable applications. High-density CMOS logic compatible One-Time Programmable (OTP) memories have been widely used in portable devices for code storage, parameter setting, redundancy implementation and circuit trimming. A novel One-Time Programmable (OTP) memory cell with Intra-Fin-Cell-Isolation (IFCI) structure on FinFET CMOS process is proposed and demonstrated. The IFCI OTP utilizes gate dielectric breakdown as program mechanism and uses the concept of Intra-Fin-Cell-Isolation to separate neighboring cells for individual operation without introducing extra masks or process steps than standard CMOS logic processes. The new OTP can be operated at low program voltage with fast program speed. More than 6 orders of On/Off read window is obtained in cell statistical characterization. Moreover, the IFCI OTP shows no disturb concerns and excellent data retention as well. With fast program speed, low power consumption, small cell size as well as superior reliability, the IFCI OTP shows great potential in advanced logic OTP applications.