Abstract
Understanding growth kinetics is essential to achieving controlled film growth. We have investigated, using real-time variable-temperature scanning tunneling microscopy, the Si homoepitaxy on Si(100) surface during chemical vapor deposition from disilane. Our STM results show different growth modes in different temperature range. At low temperature regime (RT-450℃), both 2D and 3D islands formation and hydrogen adsorption at the surface are observed, and hydrogen adsorption influence the film growth rate. At higher substrate temperature (450-550℃), the surface hydrogen desorb completely here, 2D islands formation and coalescence with step occur. At high temperature regime (>550℃), the step flow growth mode dominates, and because of the adatoms diffusion anisotropic causes to a preference growth of 1x2 surface structure, the percentage of the 1x2 structure of the total surface is close to 80~85%.