Abstract
Heat treatment processes were widely applied to enhance the characteristics of TiN thin films. TiN films were deposited on Si wafer using an unbalanced magnetron sputtering technique. Heat-treated environment, including air, Ar/H2, and Ti getter were discussed with thermodynamic and kinetic analysis. The specimens were heat-treated at 500 and 700℃ for 1 hour under optimal atmosphere to reduce the oxidation of the thin films. After heat treatment, the microstructure, resistivity and packing factor of the TiN thin films were not significantly changed. However, the surface grain size was enlarged and crystallization improved. The (200) preferred orientation was more distinct at 700℃ than 500℃ with thinner thickness. (111) texture coefficient was enhanced at both heat-treated temperature. The hardness and roughness of the specimens after annealing were slightly degraded compared with as-deposited sample. This could be attributed to the relaxation of defect structures, about 40% at 500℃ and almost 100% at 700℃. The residual stress of the specimens after 700℃ heat-treated was transformed from compressive to tensile stress that could be due to the smaller thermal expansive coefficient of Si substrate.