Abstract
This study is based on CMOS standard process (TSMC 0.35μm 2P4M process) with post-process, metal wet etching, to develop Pirani vacuum gauge. Generally, Pirani vacuum gauge is composited of heater and heat sink. The sensing theory is based on heating to heater, the temperature increase will result in resistance change because of thermal conductive property of air under different pressure. Due to this property, we can detect pressure change. Compared to previous Pirani vacuum gauge development [1], this study focuses on develop two types vacuum gauge devices with varying structures, Meander-shaped and Spiral-shaped, which can sense low pressure. We investigate Meander-shaped device parallel connection and series connection of inner structure under different heat length which will affect device performance. By the experiment results, we followed investigating Spiral-shaped device. Compared to previous work, it has favor characterization, smaller footprint. Besides, it also has advantage of sensing low pressure. Unlike previous researches which increase thermal resistance this study integrate these properties and improve the device performance. The results show that this strategy can actually promote vacuum gauge performance. Key words：CMOS-MEMS、Pirani vacuum gauge、Heater、Heat sink、Meander-shaped、Spiral-shaped、Parallel connection、Series connection、Thermal resistance