Abstract
This work describes design, fabrication of micro-electro-mechanical systems (MEMS) gyroscope. It focuses on the CMOS-MEMS (Complementary-Metal-Oxide Semiconductor) thin film lateral accelerometer and vertical gyroscope design .Structure fabricated by the post CMOS-MEMS surface micromachining process. The mass displacement resulted from external acceleration is in the angstrom to nanometer range. Such small mass and displacement bring challenges to detect the extreme small signals, which are under 1 mV/G and only a fraction change for the sensing capacitance