Abstract
In this thesis, we present a novel computational methodfor MOSFET radio frequency (RF) circuit simulation in time domain. To study the MOSFET high frequency properties, the EKV equivalent circuit model is firstly applied to replace the MOSFET in the circuit. A set of governing ordinary differential equations (ODEs) is formulated by considering the kirchhoff's current law (KCL). We directly decouple the system ODEs and solve each decoupled ODEwith the monotone iterative method and Runge-Kutta method in the time domain. Based on time domain results, sinusoidal waveformoutputs are transformed into frequency domain with the fastFourier transform. Results for a deep-submicron MOSFET underdifferent testing conditions are reported and compared with theHSPICE results. Comparison has shown the accuracy, efficiency, and robustness of the method. In contrast to HSPICE nonphysicalresults, our time domain approach provides an alternative fordeep-submicron MOSFET RF circuit simulation.