Abstract
Due to the electrical portable product, the requirements of the embedded nonvolatile memory (eNVM) are growing fast, but nowadays the eNVM can’t keep scaling down, limit by its charge retention capability. This study proposes a new differential P-channel logic-compatible multiple-time programmable non-volatile memory cell with self-recovery scheme. Its data integrity can be improved through differential structure and self-recovery scheme. The new differential P-channel logic-compatible multiple-time programmable non-volatile memory cell with self-recovery scheme is single poly and stores charge in floating gate by channel hot hole induce hot electron injection, and erases by Fowler-Nordherim tunneling. The program time is within 20ms, erase time is within 200ms, endurance is up to 100K and the cell has been verified to pass the criteria after 1000 hours of retention bake at 150oC. The self-recovery scheme can recover from the charge lose state even with significant narrowing in read window. The new cell has good operation performance and high reliability, so it will be a promising new solution for eNVM applications.