Abstract
In this work, a novel embedded non-volatile one-time programmable (OTP) memory is proposed. The four major advantages of the novel structure are as follows. First, the novel structure is fully logic-compatible without extra masks. Second, the novel structure has very high cell density. Third, the structure has high scalability. Fourth, the power consumption of the novel structure is very low. The novel structure is an n-type memory cell which uses the nitride layer of the spacer as the storage layer. Therefore, neither additional mask nor process is needed for the novel structure. The programming mechanism is source side injection, which can inject charges to the storage layer more efficiently. In this work, the 2-dimension simulation software (tsuprem4) is used to observe the fundamental principle to prove the practicability of the novel structure. The experiment results show that the new structure can be realized in 90nm and 13□m logic CMOS process and compare to traditional one-time programmable memory cells, the novel structure has ascendancy and good improvement on cost and scalability.