Abstract
Recent years, the small volume and large capacity storage devices have become a popular research with the popularization of electronic products. Flash is the mainstream non-volatile memory the present day, which have suffered from leakage and high operation voltage with the process scale down. However, these challenges advance the more new research about new memory. This thesis has proposed a Novel Contact RRAM and Flash Hybrid Memory (FCRRAM) which is fabricated by advances 50nm flash memory process. This memory cell is fully compatible with flash process. The deposited TiON RRAM film is sandwiched by tungsten contact and heavy doped n-type silicon in 1D+1R structure. With proper operation, CRRAM can switch between high resistance state and low resistance state and flash can independently inject and remove electrons in floating gate by Fowler-Nordheim (FN) tunneling. Therefore, this memory can have MLC density with SLC reliability and performance to realize high density application. In addition, excellent FCRRAM cell performance including 10M endurance, stable data retention under 150oC for 1000 hours, and cell immunity from disturbance support this new memory to be a promising candidate for high density storage application.