Abstract
A new, more accurate and more reasonable method of determining the MOSFETs effective channel length and source-drain series resistance is presented in this thesis. This method improves shit-and-ratio method and develops a more accurate calculation system. Comparing the extracted values from the Suciu-Johnston method, De La Moneda method, shift-and-ratio method, gate leakage method, and our new method, we prove that our method is the most accurate and reasonable one. Besides, we use this newly developed method to observe the co-implant source/drain effect in a 65nm pMOSFET.