Abstract
In this study, a novel logic One-Time-Programmable (OTP) cell using Step Gate Oxide of Anti-Fuse (SGAF) with fast programming was demonstrated by nano-meter CMOS logic processes for advance logic NVM’s applications. The silicon data has proven that this cell can be adapted in both 90nm & 65nm technology nodes. The SGAF cell features complete compatibility to logic process without any additional change in process or mask layers. Gate oxide rupture is used as programming mechanism for the SGAF memory cell. The unique design in this cell is creating a oxide thickness difference in this step gate oxide formation. This cell can be programmed under 4V within 10us, while this low programming voltage can greatly reduce the power consumption as well as complexity in the peripheral circuits. As the breakdown of gate oxide is used as the programming method in SGAF array memory cell, this device is expected to scale better in advance technologies.